Prof. Byungha Shin from KAIST Visited Our Group and Delivered a Seminar on Advanced Electronic Trap Detection

August 7, 2025

We were delighted to host Prof. Byungha Shin at the Department of Chemistry, LMU Munich. During his visit, Prof. Shin delivered an insightful seminar to the Physical Chemistry division titled:

"Electronic Trap Detection with Carrier-Resolved Photo-Hall Effect"

Date & Time: Thursday, August 7th, 2025, 11:00 AM (45 min + 15 min Q&A)
Venue: BUT-E0.011 (On-site), Haus E, Butenandtstr. 5-13, 81377 München

In his talk, Prof. Shin discussed the critical role of electronic trap states in semiconductor devices and their influence on the performance of transistors, memory devices, solar cells, and LEDs. He presented a novel photo-Hall-based method to detect and characterize trap density and energy levels while simultaneously extracting key carrier properties, such as mobility, photocarrier density, recombination lifetime, and diffusion length.

This innovative approach eliminates the need for invasive junction fabrication, instead leveraging a simple hyperbola relationship derived from photo-Hall data to provide unparalleled insights into charge transport and trap occupation. Prof. Shin demonstrated the application of this method to both P- and N-type silicon and to high-performance halide perovskite photovoltaic films.

We thank Prof. Shin for sharing his expertise and for a stimulating discussion with our researchers.

Prof. Byungha Shin (left), Dr. Erkan Aydin (right)

Prof. Shin is sharing his research.

Barbecue party after the talk.